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Volumn 520, Issue 4, 2011, Pages 1268-1273

Contact resistivity measurements of the buried Si-ZnO:Al interface of polycrystalline silicon thin-film solar cells on ZnO:Al

(5) Becker, C a Haberlein H a Schope G b Hupkes J b Rech, B a

a HAHN MEITNER INSTITUT (Germany)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

Aluminum; Contact resistance; Polycrystalline silicon; Thin film solar cells; Transmission line method; Zinc oxide

Indexed keywords

ALUMINUM-DOPED ZINC OXIDE; BACK CONTACT; BURIED INTERFACE; CONTACT LAYERS; CONTACT RESISTIVITIES; ELECTRICAL MATERIALS; EXPERIMENTAL METHODS; GLASS SUBSTRATES; HIGH TEMPERATURE; HIGH-TEMPERATURE TREATMENT; POLY-CRYSTALLINE SILICON; POLYCRYSTALLINE SILICON (POLY-SI); POWER-LOSSES; STRIPE STRUCTURE; TEMPERATURE STABLE; THIN FILM SOLAR CELLS; TRANSMISSION LINE METHOD; ZNO; ZNO:AL FILMS;

ALUMINUM; CONTACT RESISTANCE; DIFFUSION BARRIERS; NANOSTRUCTURED MATERIALS; OPEN CIRCUIT VOLTAGE; POLYSILICON; SILICON NITRIDE; SUBSTRATES; ZINC; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 82755161702 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.04.197 Document Type: Conference Paper

Times cited : (8)

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