Numerical simulation of the impurity photovoltaic effect in silicon solar cells

Renewable Energy

Volumn 33, Issue 2, 2008, Pages 293-298

  Khelifi, S ^a   Verschraegen, J ^b   Burgelman, M ^b   Belghachi, A ^a  

^a UNIVERSITY OF BECHAR   (Algeria)

^b GHENT UNIVERSITY   (Belgium)

Author keywords

IPV effect; Light trapping; SCAPS 1D; Silicon solar cell

Indexed keywords

COMPUTER SIMULATION; ELECTRONS; IMPURITIES; PARAMETER ESTIMATION;

IPV EFFECT; LIGHT TRAPPING; SILICON SOLAR CELL;

SOLAR CELLS;

COMPUTER SIMULATION; ELECTRONS; IMPURITIES; PARAMETER ESTIMATION; SOLAR CELLS;

ABSORPTION; ELECTRON; NUMERICAL MODEL; PHOTOVOLTAIC SYSTEM; SILICON; SOLAR POWER; WAVELENGTH;

EID: 36549067787     PISSN: 09601481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.renene.2007.05.027     Document Type: Article

References (9)

1. Würfel P. Sol Energy Mater Sol Cells 29 (1993) 403-413
2. Keevers M.J., and Green M.A. J Appl Phys 75 8 (1994) 4022-4031
3. Schmeits M., and Mani A. J Appl Phys 85 4 (1999) 2207-2212
4. Burgelman M., Nollet P., and Degrave S. Thin Solid Films 361-362 (2000) 527-532
5. Lucovsky G. Solid-State Commum 3 (1965) 299
6. Sze S.M. Physics of semiconductor devices. 2nd ed. (1981), Wiley, New York
7. Schroder D.K., Thomas R.N., and Swartz J.C. IEEE Trans Electron Dev ED-25 (1978) 254
8. Green M.A. High efficiency silicon solar cells (1987), Trans Tech Publications, Aedermansdorf
9. Hobgood H.M., Braggings T.T., Sopira M.J., Swartz J.C., and Thomas R.N. IEEE Trans Electron Dev ED-27 (1980) 14