Impurity photovoltaic effect in silicon solar cell doped with sulphur: A numerical simulation

Physica B: Condensed Matter

Volumn 406, Issue 9, 2011, Pages 1773-1777

  Azzouzi, Ghania ^a   Chegaar, Mohamed ^a  

^a FERHAT ABBAS UNIVERSITY   (Algeria)

Author keywords

Impurity photovoltaic effect; SCAPS simulator; Silicon solar cell performances

Indexed keywords

BAND GAPS; CELL EFFICIENCY; DEVICE SIMULATORS; ENERGY LEVEL; GAAS; IMPURITY CONCENTRATION; LIGHT-TRAPPING; NUMERICAL SIMULATION; SCAPS SIMULATOR; SILICON SOLAR CELL PERFORMANCES; SIMULATION RESULT; SOLAR CELL PERFORMANCE;

CONVERSION EFFICIENCY; OPEN CIRCUIT VOLTAGE; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON SOLAR CELLS; SIMULATORS; SOLAR CELLS; SOLAR POWER GENERATION; SULFUR;

PHOTOVOLTAIC EFFECTS;

EID: 79953700538     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2011.02.025     Document Type: Article

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