Impurity photovoltaic effect in GaAs solar cell with two deep impurity levels

Solar Energy Materials and Solar Cells

Volumn 92, Issue 12, 2008, Pages 1559-1565

  Khelifi, Samira ^a,b   Burgelman, Marc ^a   Verschraegen, Johan ^a   Belghachi, Abderrahmane ^b  

^a GHENT UNIVERSITY   (Belgium)

^b UNIVERSITY OF BECHAR   (Algeria)

Author keywords

GaAs solar cell; IPV effect; Light trapping; SCAPS 1D

Indexed keywords

COPPER; EFFICIENCY; ENERGY GAP; GALLIUM ARSENIDE; IMPURITIES; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM; SILICON SOLAR CELLS; SOLAR POWER GENERATION;

GAAS SOLAR CELLS; IMPURITY CONCENTRATION; IMPURITY PHOTOVOLTAIC EFFECTS; IPV EFFECT; LIGHT-TRAPPING; OCCUPATION PROBABILITY; SCAPS-1D; SOLAR CELL DEVICES;

SOLAR CELLS;

EID: 55349124917     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.07.003     Document Type: Article

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