Acceptor activation energies in epitaxial CuGaSe2 grown by MOVPE

Thin Solid Films

Volumn 387, Issue 1-2, 2001, Pages 67-70

  Gerhard, A ^a   Harneit, W ^a   Brehme, S ^a   Bauknecht, A ^a   Fiedeler, U ^a   Lux Steiner, M Ch ^a   Siebentritt, S ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Activation energy; CuGaSe2; Doping

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; CARRIER MOBILITY; COPPER ALLOYS; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; IMPURITIES; IONIZATION OF SOLIDS; METALLORGANIC VAPOR PHASE EPITAXY; PHONONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

COPPER GALLIUM SELENIDE;

SEMICONDUCTING FILMS;

EID: 0035967601     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01841-1     Document Type: Article

References (11)