Defect levels in CuGaSe2 by modulated photocurrent spectroscopy

Thin Solid Films

Volumn 519, Issue 21, 2011, Pages 7308-7311

  Krysztopa, A ^a   Igalson, M ^a   Zabierowski, P ^a   Larsen, J ^b   Aida, Y ^b,c   Siebentritt, S ^b   Gutay L ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF LUXEMBOURG   (Luxembourg)

^c TDK CORPORATION   (Japan)

Author keywords

CIGS; Defect levels; Photocurrent

Indexed keywords

CIGS; DEFECT LEVELS; ELECTRONIC PARAMETERS; HIGH FREQUENCY; LITERATURE DATA; MATERIAL STOICHIOMETRY; MODULATED PHOTOCURRENT; POLYCRYSTALLINE; TEMPERATURE SCANS;

EPITAXIAL FILMS; GALLIUM; MODEL PREDICTIVE CONTROL; PASSIVATION; PHOTOCURRENTS; STOICHIOMETRY;

DEFECTS;

EID: 80052155779     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.106     Document Type: Conference Paper

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