Defect-related degradation of Deep-UV-LEDs

Microelectronics Reliability

Volumn 50, Issue 9-11, 2010, Pages 1538-1542

  Meneghini, M ^a   Barbisan, D ^a   Bilenko, Y ^b   Shatalov, M ^b   Yang, J ^b   Gaska, R ^b   Meneghesso, G ^a   Zanoni, E ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATED STRESS; ACTIVE LAYER; CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT LEVELS; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; DEEP-UV; ELECTRO-OPTICAL; HIGH CURRENT STRESS; OPERATING VOLTAGE; OPTICAL POWER; P TYPE SEMICONDUCTOR; PARASITIC EMISSIONS; RADIATIVE EFFICIENCY; STRESS-INDUCED;

DEFECTS; DEGRADATION; OHMIC CONTACTS; ULTRAVIOLET RADIATION;

LIGHT EMITTING DIODES;

EID: 82355166899     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.07.089     Document Type: Conference Paper

References (14)

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