Stability improvement of gallium indium zinc oxide thin film transistors by post-thermal annealing

ECS Transactions

Volumn 16, Issue 9, 2009, Pages 309-313

  Jung, Ji Sim ^a   Son, Kyoung Seok ^a   Kim, Tae Sang ^a   Ryu, Myung Kwan ^a   Park, Kyung Bae ^b   Yoo, Byung Wook ^a   Kwon, Jang Yeon ^a   Le, Sang Yoon ^a   Kim, Jong Min ^a  

^a SAMSUNG Electronics   (South Korea)

^b Konkuk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; OXIDE MINERALS; STABILITY; THIN FILM CIRCUITS; THIN FILMS; ZINC OXIDE;

ATOMIC BONDS; BIAS STRESS; GALLIUM INDIUM ZINC OXIDES; LIGHT ILLUMINATION; LONG-TERM STORAGE; POOR STABILITY; POST-THERMAL ANNEALING; STABILITY IMPROVEMENT;

THIN FILM TRANSISTORS;

EID: 63149128784     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2980568     Document Type: Conference Paper

References (6)

1. K. Nomura, H. Ohta, A. Takagi, T. Kimiya, M. Hirano, H. Hosono, Nature, 432, 488(2004)
2. K, Nomura, A. Takagi, H. Ohta, M. Hirano, H. Hosono, Jpn. J. Appl. Phys., 45, 4303 (2006)
3. H. Hosono, T. Kamiya, K. Nomura, Dig. Tech. Paper AMLCD05, The Japan Society of Applied Physics, Tokyo, 2005, p. 83
4. F. R. Libsch and J. Kanicki, Appl. Phys. Lett., 62(11), 1286 (1993)
5. H. J. Egelhaaf and D. Oelkrug, J. Cryst. Growth, 161, 190 (1996)
6. E. G. Bylander, J. Appl. Phys, 49, 1188 (1978)