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Volumn , Issue , 2007, Pages 998-1002

200°C operation of a DC-DC converter with SiC power devices

Author keywords

[No Author keywords available]

Indexed keywords

(+ MOD 2N) OPERATION; APPLIED (CO); DC CONVERTERS; DC-DC POWER CONVERTERS; ELEVATED TEMPERATURES; HIGH TEMPERATURE (HT); MAGNETICS DESIGN; PERFORMANCE EVALUATION (PE); POWER DEVICES; POWER SEMICONDUCTOR DEVICES;

EID: 46449127702     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEX.2007.357636     Document Type: Conference Paper
Times cited : (23)

References (14)
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  • 2
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  • 3
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    • J. M. O'Connor, "225 C High temperature silicon-on-insulator (SOI) ASICs for harsh environments," Proc. IEEE Int. Workshop on Integrated Power Packaging, pp. 2-5, Sept. 1998.
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    • O'Connor, J.M.1
  • 4
    • 46449092688 scopus 로고    scopus 로고
    • Emerging silicon-carbide power devices enable revolutionary changes in high voltage power conversion
    • Oct
    • A. Hefner et al., "Emerging silicon-carbide power devices enable revolutionary changes in high voltage power conversion," IEEE Power Electronics Soc. Newsletter, Vol. 16, No. 4, pp. 10-12, Oct. 2004.
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    • Hefner, A.1
  • 5
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    • High-temperature electronics - A role for wide bandgap semiconductors?
    • June
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    • (2002) Proc. IEEE , vol.90 , Issue.6 , pp. 1065-1076
    • Neudeck, P.G.1
  • 8
    • 79951852131 scopus 로고    scopus 로고
    • Comparative characterization of capacitors used in high temperature electronics applications
    • HiTEC, pp, June
    • J. S. Bowers, "Comparative characterization of capacitors used in high temperature electronics applications," Proc. IEEE High Temperature Electronics Conf. (HiTEC), pp. 184-190, June 1998.
    • (1998) Proc. IEEE High Temperature Electronics Conf , pp. 184-190
    • Bowers, J.S.1
  • 9
    • 0242696081 scopus 로고    scopus 로고
    • Performance evaluation of a Schottky SiC power diode in a boost PFC application
    • Nov
    • G. Spiazzi et al., "Performance evaluation of a Schottky SiC power diode in a boost PFC application," IEEE Trans. Power Electronics, Vol. 18, No. 6, pp. 1249-1253, Nov. 2003.
    • (2003) IEEE Trans. Power Electronics , vol.18 , Issue.6 , pp. 1249-1253
    • Spiazzi, G.1
  • 10
    • 2442575184 scopus 로고    scopus 로고
    • Characterization of SiC Schottky diodes at different temperatures
    • June
    • B. Ozpineci and L. M. Tolbert, "Characterization of SiC Schottky diodes at different temperatures," IEEE Power Electronics Letters, Vol. 1, No. 2, pp. 54-57, June 2003.
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  • 11
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    • High temperature operation of a dc-dc power converter utilizing SiC power devices
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    • B. Ray et al. "High temperature operation of a dc-dc power converter utilizing SiC power devices," Proc. IEEE-APEC, pp. 315-321, Feb. 2005.
    • (2005) Proc. IEEE-APEC , pp. 315-321
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  • 12
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.