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Volumn 58, Issue 12, 2011, Pages 4361-4369

Voltage snapback in amorphous-GST memory devices: Transport model and validation

Author keywords

Amorphous chalcogenide; nonvolatile memory; phase change memory (PCM); transport modeling

Indexed keywords

AMORPHOUS CHALCOGENIDE; FILAMENTATION; NON-VOLATILE MEMORIES; PHASE CHANGES; SCALING PROPERTIES; SNAP-BACK PHENOMENA; TRANSPORT MODELING; TRANSPORT MODELS; TRAPPED ELECTRONS; VOLTAGE SNAPBACK;

EID: 82155175610     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2168402     Document Type: Article
Times cited : (17)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.