Modeling of the vol snap-back in amorphous-GST memory devices

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2010, Pages 257-260

  Rudan, M ^a   Giovanardi, F ^a   Tsafack, T ^a   Xiong, F ^c   Piccinini, E ^a   Buscemi, F ^a   Liao, A ^c   Pop, E ^c   Brunetti, R ^b   Jacoboni, C ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CHALCOGENIDE; BAND TRANSITIONS; CHARGE TRANSPORT; MEMORY DEVICE; TRAPPED ELECTRONS; UNIFORM STRUCTURE;

SEMICONDUCTOR DEVICES;

EID: 78649618981     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2010.5604511     Document Type: Conference Paper

References (7)

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5. D. Adler et al., Threshold switching in chalcogenide-glass thin films J. Appl. Phys. 51, 3289 (1980).
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7. D. Ielmini and Y. Zhang, Evidence for trap-limited transport in the subthreshold conduction regime of chalcogenide glasses, Appl. Phys. Lett. 90, 192102 (2007).