Ultra-low power phase change memory with carbon nanotube interconnects

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2010, Pages 253-254

  Xiong, Feng ^a,c   Liao, Albert ^a,c   Estrada, David ^a,c   Pop, Eric ^a,b,c  

^a University of Illinois at Urbana Champaign   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c Micro and Nanotechnology Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE INTERCONNECTS; LOW POWER; NON-VOLATILE MEMORIES; NOVEL METHODS; ORDERS OF MAGNITUDE; PROGRAMMING CURRENTS; RE-CONFIGURABLE; REVERSIBLE SWITCHING; ULTRA-LOW POWER;

CARBON NANOTUBES; GERMANIUM; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 77957554811     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2010.5551972     Document Type: Conference Paper

References (4)

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3. M. Lankhorst et al, Nat. Mat. 4, 347 (2005).
4. P. Qi et al, J. Am. Chem. Soc. 126, 11774 (2004).