메뉴 건너뛰기




Volumn , Issue , 2011, Pages 333-338

A novel hybrid packaging structure for high-temperature SiC power modules

Author keywords

High Temperature Packaging; Hybrid Packaging Structure; Planar Packaging Structure; Silicon Carbide

Indexed keywords

FABRICATION PROCESS; HIGH TEMPERATURE; HIGH-TEMPERATURE PACKAGING; HYBRID PACKAGING STRUCTURE; HYBRID STRUCTURE; PACKAGING STRUCTURE; PARASITICS; PLANAR PACKAGING STRUCTURE; PLANAR STRUCTURE; POWER MODULE; WIREBOND;

EID: 81855211043     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2011.6063788     Document Type: Conference Paper
Times cited : (6)

References (14)
  • 5
    • 33745918279 scopus 로고    scopus 로고
    • The Application of Silicon-Carbide (SiC) Semiconductor Power Electronics to Extreme High-Temperature Extraterrestrial Environments
    • March
    • J. Hornberger, A. Lostetter, T. McNutt, S. Magan Lal, and A. Mantooth, "The Application of Silicon-Carbide (SiC) Semiconductor Power Electronics to Extreme High-Temperature Extraterrestrial Environments," in Proc. IEEE Int. Aerospace Conference 2004, March 2004.
    • (2004) Proc. IEEE Int. Aerospace Conference 2004
    • Hornberger, J.1    Lostetter, A.2    McNutt, T.3    Magan Lal, S.4    Mantooth, A.5
  • 8
    • 65949091300 scopus 로고    scopus 로고
    • An advanced packaging approach of sic high temperature power electronics modules by embedding chip interconnection
    • May
    • Z. Liang, J. Yin, and J. D. van Wyk, "an advanced packaging approach of sic high temperature power electronics modules by embedding chip interconnection," in Proc. IMPAS HiTEC 2006, May 2006, pp. 101-107.
    • (2006) Proc. IMPAS HiTEC 2006 , pp. 101-107
    • Liang, Z.1    Yin, J.2    Van Wyk, J.D.3
  • 11
    • 34548175460 scopus 로고    scopus 로고
    • High-temperature operation of SiC power devices by low-temperature sintered silver die-attachment
    • DOI 10.1109/TADVP.2007.898628, Special Section on Wafer-Level Packaging
    • G. Bai, J. Yin, Z. Zhang, G. Q. Lu, J.D. van Wyk, "High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment,"IEEE Trans. Advanced Packaging, vol. 30, issue 3, pp. 506-510, Aug. 2007. (Pubitemid 47308009)
    • (2007) IEEE Transactions on Advanced Packaging , vol.30 , Issue.3 , pp. 506-510
    • Bai, J.G.1    Yin, J.2    Zhang, Z.3    Lu, G.-Q.4    Van Wyk, J.D.5
  • 12
    • 0024897782 scopus 로고    scopus 로고
    • An Active Power Factor Correction Technique for Three-Phase Diode Rectifiers
    • A.R. Prasad, P. Ziogas and S. Manias, "An Active Power Factor Correction Technique for Three-Phase Diode Rectifiers," in PESC 1989, pp. 58-66.
    • PESC 1989 , pp. 58-66
    • Prasad, A.R.1    Ziogas, P.2    Manias, S.3
  • 14
    • 33744987221 scopus 로고    scopus 로고
    • Effect and Utilization of Common Source Inductance in Synchronous Rectification
    • B.Yang, J.Zhang, "Effect and Utilization of Common Source Inductance in Synchronous Rectification", in Proc. IEEE APEC 2005, vol.3, pp. 1407-1411, 2005
    • (2005) Proc. IEEE APEC 2005 , vol.3 , pp. 1407-1411
    • Yang, B.1    Zhang, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.