980 V, 33A normally-off 4H-SiC buried gate static induction transistors

Materials Science Forum

Volumn 679-680, Issue , 2011, Pages 662-665

  Takatsuka, Akio ^a   Tanaka, Yasunori ^a   Yano, Koji ^b   Yatsuo, Tsutomu ^a   Arai, Kazuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

Buried gate static induction transistor; Normally off; SiC; Threshold voltage

Indexed keywords

STATE ESTIMATION; THRESHOLD VOLTAGE; TRANSISTORS;

AVALANCHE BREAKDOWN; CURRENT RATING; DESIGN PARAMETERS; NORMALLY OFF; POWER DENSITIES; PROCESS CONDITION; SPECIFIC-ON RESISTANCE; STATIC INDUCTION TRANSISTORS;

SILICON CARBIDE;

EID: 79955121297     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.679-680.662     Document Type: Conference Paper

References (4)

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