High-power GaN HFETs on Si substrate

Furukawa Review

Volumn , Issue 34, 2008, Pages 17-23

  Ikeda, Nariaki ^a   Li, Jiang ^a   Kato, Kazuo ^a   Kaya, Shuusuke ^a   Kazama, Toshiaki ^a   Kokawa, Takuya ^a   Sato, Yoshihiro ^a   Iwami, Masayuki ^a   Nomura, Takehiko ^a   Masuda, Mitsuru ^b   Kato, Sadahiro ^a  

^a Yokohama Research Laboratory   (Japan)

^b R and D Division

Author keywords

[No Author keywords available]

Indexed keywords

AIGAN/GAN; BREAK DOWN VOLTAGES; CARBON CONCENTRATIONS; CURRENT CAPACITIES; CURRENT COLLAPSES; DEVICE PERFORMANCES; GAN LAYERS; GROWTH TECHNOLOGIES; HIGH POWERS; POWER DEVICES; SAPPHIRE SUBSTRATES; SI SUBSTRATES;

CONCENTRATION (PROCESS); CORUNDUM; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT MEASUREMENT; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; IONIZATION OF GASES; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES;

GALLIUM ALLOYS;

EID: 56149103576     PISSN: None     EISSN: 13481797     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. T.P. Chow, R. Tyagi, "Wide bandgap compound semiconductors for superior high-voltage unipolar power devices," IEEE Trans Electron Devices, Vol.41, pp.1481-1483, 1994.
2. O. Akutas, Z.E Fan, S.N. Mohammad, A.E. Botchkarev, H. Morkoc, "High temperature characteristics of AlGaN/GaN modulation doped field effect transistors," Appl Phys Lett, Vol.69, pp.3872-3874, 1996.
3. Seikoh Yoshida, Jiang Li, Takahiro Wada, and Hironari Takehara, "High-Power AlGaN/GaN HFET with a Lower On-state Resistance and a Higher Switching Time for an Inverter Circuit," Proc.15th ISPSD, pp.58-61, 2003.
4. W. Saito Tomohiro Nitta, Yorito Kakuuchi, Yasunobu Saito, Kunio Tsuda, Ichiro Omura, "On-resistance modulation of high voltage GaN HEMT on sapphire substrate under high applied voltage," IEEE Electron Device Letters, 28, (2007) 676.
5. Shinichi Iwakami, Osamu Machida, Masataka Yanagihara, Toshihiro Ehara, Nobuo Kaneko, Hirokazu Goto, Akio Iwabuchi, "20mΩ, 750V high-power AlGaN/GaN heterostructure field-effect transistors on Si substrate," JJAP, 46, (2007) L587.
6. Nariaki Ikeda, Kazuo Kato, Kazuo Kondoh, Hiroshi Kambayashi, Jiang Li, and Seikoh Yoshida, "Over 55 A, 800 V high power AlGaN/ GaN HFETs for power switching application," Phys. Stat. Sol. (a) 204, No. 6, (2007) pp. 2028-2031.
7. S. Yoshida, S. Katoh, H. Takehara, Y. Satoh, J. Li, N. Ikeda, K.Hataya, H. Sasaki, Phys. Stat. Sol. (a) 203 (2006) 1739.
8. Sadahiro Kato, Yoshihiro Satoh, Hitoshi Sasaki, Iwami Masayuki, Seikoh Yoshida, "C-doped GaN buffer layers with high breakdown voltages for highpower operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE," Journal of Crystal Growth 298 (2007) 831-834.