NVM characteristics of single-MOSFET cells using nitride spacers with gate-to-drain NOI

IEEE Transactions on Electron Devices

Volumn 51, Issue 11, 2004, Pages 1811-1817

  Hsieh, Chien Sheng ^a   Kao, Pai Chu ^a   Chiu, Chia Sung ^a   Hon, Chih Hsueh ^a   Fan, Chen Chia ^a   Kung, Wei Chain ^a   Wang, Zih Wun ^a   Jeng, Erik S ^a  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS; ION IMPLANTATION; NONVOLATILE STORAGE; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE;

CHARGE TRAPPING; HOT CARRIER EFFECT; NONOVERLAPPED IMPLANTATION; NONVOLATILE MEMORY (NVM); SILICON NITRIDE SPACERS; SINGLE MOSFET CELLS;

MOSFET DEVICES;

EID: 8144229508     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.836796     Document Type: Article

References (12)

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