Cause of erase speed degradation during two-bit per celloperation of a trapping nitride storage flash memory cell

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 522-526

  Tsai, W J ^a   Zous, N K ^a   Chou, M H ^a   Huang, Smile ^a   Chen, H Y ^a   Yeh, Y H ^a   Liu, M Y ^a   Yeh, C C ^a   Wang, T ^a   Ku, Joseph ^a   Lu, Chih Yuan ^a  

^a NONE

Author keywords

Endurance; Erase speed degradation; Flash memory; MXVAND; NROM; ONO; Over erasure; PHINES; Program erase cycling; SONOS; Trapping nitride storage; Two bit per cell

Indexed keywords

DEGRADATION; ELECTRONS; NITRIDES; ROM; SEMICONDUCTOR DOPING;

CHANNEL-HOT-ELECTRON (CHE) INJECTION; CYCLIC ENDURANCE; ERASE SPEED DEGRADATION;

FLASH MEMORY;

EID: 3042658180     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

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