A novel pseudo-floating-gate flash EEPROM device (Ψ-cell)

IEEE Electron Device Letters

Volumn 18, Issue 7, 1997, Pages 319-322

  Papadas, C ^a   Guillaumot, B ^a   Cialdella, B ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); MOSFET DEVICES; NONVOLATILE STORAGE;

FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM); PSEUDO FLOATING GATES;

ROM;

EID: 0031192572     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.596924     Document Type: Article

References (9)

1. R. Jolly, H. Grinolds, and R. Groth, "A model for conduction in floatinggate EEPROM's," IEEE Trans. Electron Devices, vol. ED-31, p. 767, 1984.
2. S. Mukherjee, T. Chang, R. Pang, M. Knetch, and D. Hu, "A single transistor EEPROM cell and its implementation in a 512 K CMOS EEPROM," in IEDM Tech. Dig., 1985, p. 616.
3. S. Haddad, C. Chang, A. Wang, J. Bustillo, J. Lien, T. Montalvo, and M. V. Buskirk, "An investigation of erase-mode dependant hole trapping in flash EEPROM memory cell," IEEE Electron Device Lett., vol. 11, p. 11, 1990.
4. C. Papadas and B. Guillaumot, "An electrically programmable memory cell," U.S. Patent Application 08/413206, pending.
5. A. Concannon, A. Mathewson, C. Papadas, B. Guillaumot, and C. Kelaidis, "Theoretical analysis of the Ψ-cell," in Proc. ESSDERC'97, to be published.
6. R. Bez, D. Cantarelli, and P. Cappelletti, "Experimental transient analysis of the tunnel current in EEPROM cells," IEEE Trans. Electron Devices, vol. 37, p. 1081, 1990.
7. E. Vincent, C. Papadas, C. Riva, F. Pio, and G. Ghibaudo, "On the charge build-up mechanisms in very thin insulator layers," in Proc. ESSDERC'94, 1994, p. 495.
8. C. Papadas, G. Ghibaudo, G. Pananakakis, C. Riva, and P. Ghezzi, "Model for programming window degradation in FLOTOX EEPROM cells," IEEE Electron Device Lett., vol. 13, p. 89, 1992.
9. C. Papadas, G. Ghibaudo, G. Pananakakis, and C. Riva, "Numerical transient simulation of the programming window degradation in FLOTOX EEPROM cells," Solid-State Electron., vol. 36, p. 1303, 1993.