Examination of insulator regime conduction mechanisms in epitaxial and polycrystalline SmNiO3 thin films

Journal of Applied Physics

Volumn 110, Issue 9, 2011, Pages

  Ha, Sieu D ^a   Aydogdu, Gulgun H ^a   Ramanathan, Shriram ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP NARROWING; BULK CRYSTALS; CONDUCTION MECHANISM; CURRENT-VOLTAGE DATA; DECAY PARAMETERS; DEFECT STATE; EXPONENTIAL TRAP DISTRIBUTION; FILM SURFACES; HIGH ELECTRIC FIELDS; HIGH TEMPERATURE; HOPPING CONDUCTION; INSULATOR-TO-METAL TRANSITIONS; METAL-INSULATOR PHASE TRANSITION; NEGATIVE BIAS; POLYCRYSTALLINE; POLYCRYSTALLINE FILM; POSITIVE BIAS; POWER LAW; POWER LAW EXPONENT; ROOM TEMPERATURE; SPACE-CHARGE LIMITED; SPACE-CHARGE LIMITED CONDUCTION; SWITCHING DEVICES; TEMPERATURE DEPENDENCE;

ACTIVATION ENERGY; DEFECT DENSITY; ELECTRIC FIELDS; EPITAXIAL GROWTH; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION;

EPITAXIAL FILMS;

EID: 81355163315     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3658263     Document Type: Article

References (21)

1. P. Lacorre, J. B. Torrance, J. Pannetier, A. I. Nazzal, P. W. Wang, and T. C. Huang, J. Solid-State Chem. 91, 225 (1991). 10.1016/0022-4596(91)90077-U
2. A. Tiwari and K. P. Rajeev, Solid-State Commun. 109, 119 (1998). 10.1016/S0038-1098(98)00515-8
3. X. Granados, J. Fontcuberta, X. Obradors, and J. B. Torrance, Phys. Rev. B 46, 15683 (1992). 10.1103/PhysRevB.46.15683
4. X. Granados, J. Fontcuberta, X. Obradors, L. Maosa, and J. B. Torrance, Phys. Rev. B 48, 11666 (1993). 10.1103/PhysRevB.48.11666
5. G. Catalan, R. M. Bowman, and J. M. Gregg, Phys. Rev. B 62, 7892 (2000). 10.1103/PhysRevB.62.7892 (Pubitemid 32366540)
6. F. Conchon, A. Boulle, R. Guinebretiere, E. Dooryhée, J. L. Hodeau, C. Girardot, S. Pignard, J. Kreisel, and F. Weiss, J. Phys.: Condens. Matter 20, 145216 (2008). 10.1088/0953-8984/20/14/145216 (Pubitemid 351570036)
7. G. H. Aydogdu, S. D. Ha, B. Viswanath, and S. Ramanathan, J. Appl. Phys. 109, 124110 (2011). 10.1063/1.3598055
8. T. Katsufuji, Y. Okimoto, T. Arima, Y. Tokura, and J. B. Torrance, Phys. Rev. B 51, 4830 (1995). 10.1103/PhysRevB.51.4830
9. B. I. Shklovskii, Sov. Phys. Semicond. 6, 1053 (1973).
10. J. Son, P. Moetakef, J. M. LeBeau, D. Ouellette, L. Balents, S. J. Allen, and S. Stemmer, Appl. Phys. Lett. 96, 3 (2010). 10.1063/1.3309713
11. S. W. Cheong, H. Y. Hwang, B. Batlogg, A. S. Cooper, and P. C. Canfield, Physica B 194-196, 1087 (1994).
12. R. Scherwitzl, P. Zubko, I. G. Lezama, S. Ono, A. F. Morpurgo, G. Catalan, and J.-M. Triscone, Adv. Mater. 22, 5517 (2010). 10.1002/adma.201003241
13. A. I. Yakimov, C. J. Adkins, R. Boucher, A. V. Dvurechenskii, A. I. Nikiforov, O. P. Pchelyakov, and G. Biskupski, Phys. Rev. B 59, 12598 (1999). 10.1103/PhysRevB.59.12598
14. J. Han, M. Shen, W. Cao, A. M. R. Senos, and P. Q. Mantas, Appl. Phys. Lett. 82, 67 (2003). 10.1063/1.1535262
15. D. C. Look, D. C. Walters, M. O. Manasreh, J. R. Sizelove, C. E. Stutz, and K. R. Evans, Phys. Rev. B 42, 3578 (1990). 10.1103/PhysRevB.42.3578
16. S. D. Ha, G. H. Aydogdu, and S. Ramanathan, Appl. Phys. Lett. 98, 012105 (2011). 10.1063/1.3536486
17. P. Mark and W. Helfrich, J. Appl. Phys. 33, 205 (1962). 10.1063/1.1728487
18. V. Kumar, S. C. Jain, A. K. Kapoor, J. Poortmans, and R. Mertens, J. Appl. Phys. 94, 1283 (2003). 10.1063/1.1582552
19. D. S. Shang, Q. Wang, L. D. Chen, R. Dong, X. M. Li, and W. Q. Zhang, Phys. Rev. B 73, 245427 (2006). 10.1103/PhysRevB.73.245427 (Pubitemid 43945846)
20. S. M. Sze, Physics of Semiconductor Devices (Wiley-Interscience, New York, 1981).
21. CRC Handbook of Chemistry and Physics, edited by, W. M. Haynes, (CRC Press, Boca Raton, 2011).