Low-dimensional Mott material: Transport in ultrathin epitaxial LaNiO 3 films

Applied Physics Letters

Volumn 96, Issue 6, 2010, Pages

  Son, Junwoo ^a   Moetakef, Pouya ^a   Lebeau, James M ^a   Ouellette, Daniel ^b   Balents, Leon ^b   Allen, S James ^b   Stemmer, Susanne ^a  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TRANSPORT; CRITICAL THICKNESS; DIFFERENT SUBSTRATES; ELECTRICAL RESISTIVITY; FILM RESISTIVITY; FILM STRAIN; HALL COEFFICIENT; MAGNETOTRANSPORTS; ULTRA-THIN;

ELECTRIC CONDUCTIVITY;

TENSILE STRAIN;

EID: 76749136393     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3309713     Document Type: Article

References (20)

1. P. Hansmann, X. P. Yang, A. Toschi, G. Khaliullin, O. K. Andersen, and K. Held, Phys. Rev. Lett. 0031-9007 103, 016401 (2009). 10.1103/PhysRevLett.103. 016401
2. J. B. Torrance, P. Lacorre, A. I. Nazzal, E. J. Ansaldo, and C. Niedermayer, Phys. Rev. B 0163-1829 45, 8209 (1992). 10.1103/PhysRevB.45.8209
3. J. L. García-Muoz, J. Rodriguez-Carvajal, P. Lacorre, and J. B. Torrance, Phys. Rev. B 0163-1829 46, 4414 (1992). 10.1103/PhysRevB.46.4414
4. U. Staub, G. I. Meijer, F. Fauth, R. Allenspach, J. G. Bednorz, J. Karpinski, S. M. Kazakov, L. Paolasini, and F. d'Acapito, Phys. Rev. Lett. 0031-9007 88, 126402 (2002). 10.1103/PhysRevLett.88.126402
5. K. Sreedhar, J. M. Honig, M. Darwin, M. Mcelfresh, P. M. Shand, J. Xu, B. C. Crooker, and J. Spalek, Phys. Rev. B 0163-1829 46, 6382 (1992). 10.1103/PhysRevB.46.6382
6. K. P. Rajeev, G. V. Shivashankar, and A. K. Raychaudhuri, Solid State Commun. 0038-1098 79, 591 (1991). 10.1016/0038-1098(91)90915-I (Pubitemid 21692512)
7. We use the pseudocubic unit cells for denoting the surface orientations and lattice parameters for all noncubic substrates and the LaNiO3 films.
8. K. Tsubouchi, I. Ohkubo, H. Kumigashira, Y. Matsumoto, T. Ohnishi, M. Lippmaa, H. Koinuma, and M. Oshima, Appl. Phys. Lett. 0003-6951 92, 262109 (2008). 10.1063/1.2955534
9. N. Gayathri, A. K. Raychaudhuri, X. Q. Xu, J. L. Peng, and R. L. Greene, J. Phys.: Condens. Matter 0953-8984 10, 1323 (1998). 10.1088/0953-8984/10/6/015
10. N. F. Mott, Philos. Mag. 1478-6435 26, 1015 (1972). 10.1080/ 14786437208226973
11. G. Bergmann, Phys. Rep. 0370-1573 107, 1 (1984). 10.1016/0370-1573(84) 90103-0
12. P. A. Lee and T. V. Ramakrishnan, Rev. Mod. Phys. 0034-6861 57, 287 (1985). 10.1103/RevModPhys.57.287
13. B. L. Altshuler, A. G. Aronov, and P. A. Lee, Phys. Rev. Lett. 0031-9007 44, 1288 (1980). 10.1103/PhysRevLett.44.1288
14. S. Fujita and K. Ito, Quantum Theory of Conducting Matter (Springer, New York, 2007), p. 195.
15. N. Hamada, J. Phys. Chem. Solids 0022-3697 54, 1157 (1993). 10.1016/0022-3697(93)90159-O
16. R. Eguchi, A. Chainani, M. Taguchi, M. Matsunami, Y. Ishida, K. Horiba, Y. Senba, H. Ohashi, and S. Shin, Phys. Rev. B 0163-1829 79, 115122 (2009). 10.1103/PhysRevB.79.115122
17. N. Shirakawa, K. Murata, Y. Nishihara, S. Nishizaki, Y. Maeno, T. Fujita, J. G. Bednorz, F. Lichtenberg, and N. Hamada, J. Phys. Soc. Jpn. 0031-9015 64, 1072 (1995). 10.1143/JPSJ.64.1072
18. S. J. Allen, F. Derosa, C. J. Palmstrom, and A. Zrenner, Phys. Rev. B 0163-1829 43, 9599 (1991). 10.1103/PhysRevB.43.9599
19. If magnetotransport can be measured in the regime where μe,h B>1, where μe,h is the respective carrier mobility, the Hall effect will be a nonlinear function of magnetic field and it may be possible to distinguish different carrier contributions, see Ref.. The layers explored here exhibit linear Hall effect and appear to be far from this limit.
20. J. Z. Sun, D. W. Abraham, R. A. Rao, and C. B. Eom, Appl. Phys. Lett. 0003-6951 74, 3017 (1999). 10.1063/1.124050