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Journal of Applied Physics

Volumn 110, Issue 9, 2011, Pages

Growth mechanism and electronic properties of epitaxial In 2O3 films on sapphire

(9) Wang, Ch Y a Kirste, L a Morales, F M b Manuel J M b Rohlig C C a Kohler K a Cimalla, V a Garcia R b Ambacher, O a

a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

b UNIVERSITY OF CÁDIZ (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BULK ELECTRONIC PROPERTIES; C-PLANE SAPPHIRE SUBSTRATES; EPITAXIAL RELATIONSHIPS; GROWTH MECHANISMS; HIGH QUALITY; INDIUM OXIDE; OZONE OXIDATION; POST TREATMENT; STRAIN-RELAXED; SURFACE AND INTERFACES; SURFACE LAYERS; TWO-STEP GROWTH; ULTRA-VIOLET LIGHT;

EPITAXIAL GROWTH; INDIUM; OZONE; SAPPHIRE; THICK FILMS; ULTRAVIOLET RADIATION;

ELECTRONIC PROPERTIES;

EID: 81355142834 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3658217 Document Type: Article

Times cited : (26)

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