Surface structure and electronic properties of in2O3(111) single-crystal thin films grown on Y-stabilized zrO2(111)

Chemistry of Materials

Volumn 21, Issue 19, 2009, Pages 4353-4355

  Zhang, K H L ^a   Payne, D J ^a   Palgrave, R G ^a   Lazarov, V K ^a   Chen, W ^b   Wee, A T S ^b   McConville, C F ^c   King, P D C ^c   Veal, T D ^c   Panaccione, G ^d   Lacovig, P ^e   Egdell, R G ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c UNIVERSITY OF WARWICK   (United Kingdom)

^d LABORATORIO TASC   (Italy)

^e SINCROTRONE TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; ELECTRON ACCUMULATION; ELECTRON ENERGIES; GEOMETRICAL STRUCTURE; INTRINSIC PROPERTY; SCANNING TUNNELING MICROSCOPES; SURFACE ELECTRONIC PROPERTIES;

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; INDIUM; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTAL SURFACES; STRUCTURAL PROPERTIES; SURFACE STRUCTURE; THIN FILMS;

SURFACE PROPERTIES;

EID: 70350231440     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm901127r     Document Type: Article

References (25)

1. Granqvist, C. G.; Hulta° ker, A. Thin Solid Films 2002, 411, 1.
2. Granqvist, C. G. Sol. Energy Mater. Sol. Cells 2007, 91, 1529.
3. Thomas, G. Nature 1997, 389, 907.
4. Nomura, K.; et al. Science 2003, 300, 1269.
5. Tsukazaki, A.; Ohtomo, A.; Kita, T.; Ohno, Y.; Ohno, H.; Kawasaki, M. Science 2007, 315, 1388.
6. Chern, M. Y.; Hunag, Y. C.; Lu, X. L. Thin Solid Films 2007, 515, 7866.
7. Wang, Ch. Y.; Dai, Y.; Pezoldt, J.; Lu, B.; Kups, Th.; Cimalla, V.; Ambacher, O. Cryst. Growth Des. 2008, 8, 1257.
8. Ohta, H.; Orita, M.; Hirano, M.; Tanji, H.; Kawazoe, H.; Hosono, H. Appl. Phys. Lett. 2000, 76, 2740.
9. Bourlange, A.; et al. Appl. Phys. Lett. 2008, 92, 092117.
10. Morales, E. H.; He, Y.; Vinnichenko, M.; Delley, B.; Diebold, U. New J. Phys. 2008, 10, 125030.
11. Bourlange, A.; Payne, D. J.; Egdell, R. G.; Foord, J. S.; Jacobs, R. M. J.; Schertel, A.; Dobson, P. J.; Hutchison, J. L. Chem. Mater. 2008, 20, 4551.
12. Weiher, R. L.; Ley, R. P. J. Appl. Phys. 1966, 37, 299.
13. Hamberg, I.; Granqvist, C. G.; Berggren, K. F.; Sernelius, B. E.; Egstrom, L. Phys. Rev. B 1984, 30, 3240.
14. Erhart, P.; Klein, A.; Egdell, R. G.; Albe, K. Phys. Rev. B 2007, 75, 153205.
15. Christou, V.; Etchells, M.; Renault, O.; Dobson, P. J.; Salata, O. V.; Beamson, G.; Egdell, R. G. J. Appl. Phys. 2000, 88, 5180.
16. Gassenbauer, Y.; et al. Phys. Rev. B 2006, 73, 245312.
17. Walsh, A.; et al. Phys. Rev. Lett. 2008, 100, 167402.
18. Fuchs, F.; Bechstedt, F. Phys. Rev. B 2008, 77, 155107.
19. Ishii, H.; Sugiyama, K.; Ito, E.; Seki, K. Adv. Mater. 1999, 11, 605.
20. Khodabakhsh, S.; Sanderson, B. M.; Nelson, J.; Jones, T. S. Adv. Funct. Mat. 2006, 16, 95.
21. Marezio, M. Acta Crystallogr. 1966, 20, 723.
22. Moringa, M.; Cohen, J. B. Acta Crystallogr., Sect. A 1979, 35, 789.
23. King, P. D. C.; Veal, T. D.; Payne, D. J.; Bourlange, A.; Egdell, R. G.; McConville, C. F. Phys. Rev. Lett. 2008, 101, 116808.
24. Sachhi, M.; et al. Phys. Rev. B 2005, 71, 155117.
25. Scofield, J. H. Theoretical Photoionization Cross Sections from 1 to 1500 keV; Lawrence Livermore National Laboratory Report UCRL-51326; Lawrence Livermore National Laboratory: Lawrence, CA, 1973.