Parametric modeling and optimization of Chemical Vapor Deposition process

Proceedings of the ASME Design Engineering Technical Conference

Volumn 1, Issue PARTS A AND B, 2008, Pages 757-766

  Lin, Po Ting ^a   Jaluria, Yogesh ^a   Gea, Hae Chang ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIONAL SAMPLING; CHEMICAL VAPOR DEPOSITION PROCESS; CVD REACTORS; OPTIMIZATION FORMULATIONS; PARAMETRIC MODELING; PARAMETRIC MODELS; RADIAL BASIS FUNCTIONS; WORKING AREAS;

COMPUTER AIDED DESIGN; DEPOSITION; DEPOSITION RATES; OPTIMIZATION; RADIAL BASIS FUNCTION NETWORKS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS;

CHEMICAL VAPOR DEPOSITION;

EID: 81155138303     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1115/DETC2008-50054     Document Type: Conference Paper

References (34)

1. W. G. Breiland and M. E. Coltrin, "Si Deposition Rates in a Two-Dimensional CVD Reactor and Comparisons with Model Calculations," J. Electrochem. Soc., vol. 137, pp. 2313-2319, 1990.
2. J. G. E. Gardeniers, W. E. J. R. Maas, R. Z. C. Van Meerten, and L. J. Giling, "Influence of Temperature on the Crystal Habit of Silicon in the Si-H-Cl CVD System: I. Experimental Results," J. Cryst. Growth, vol. 96, pp. 821-842, 1989.
3. H.-E. Cheng, M.-J. Chiang, and M.-H. Han, "Growth Characteristics and Properties of TiN Coating by Chemical Vapor Deposition," J. Electrochem. Soc., vol. 142, pp. 1573-1578, 1995.
4. J. R. Creighton and J. E. Parmeter, "Metal CVD for Microelectronic Applications: An Examination of Surface Chemistry and Kinetics," Crit. Rev. Solid State Mat. Sci., vol. 18, pp. 175-238, 1993. (Pubitemid 23683034)
5. W. L. Gladfelter, "Selective Metallization by Chemical Vapor Deposition," Chem. Matter, vol. 5, pp. 1372-1388, 1993.
6. H. E. Hintermann, "Advances and Development in CVD Technology," Mat. Sci. Engg., vol. A209, pp. 366-371, 1996. (Pubitemid 126383461)
7. G. Evans and R. Greif, "A Numerical Model of the Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor," ASME J. Heat Transfer, vol. 109, pp. 928-935, 1987. (Pubitemid 18530813)
8. D. I. Fotiadis, M. Boekholt, K. F. Jensen, and W. Richter, "Flow and Heat Transfer in CVD Reactors: Comparison of Raman Temperature Measurements and Finite Element Predictions," J. Cryst. Growth, vol. 100, pp. 577-599, 1990. (Pubitemid 20683683)
9. D. I. Fotiadis, A. M. Kremer, D. R. McKenna, and K. F. Jensen, "Complex Flow Phenomena in Vertical MOCVD Reactors: Effects on Deposition Uniformity and Interface Abruptness," J. Cryst. Growth, vol. 85, pp. 154-164, 1987.
10. K. C. Karki, P. S. Sathyamurthy, and S. V. Patankar, "Laminar Flow over a Confined Heated Disk: Effect of Buoyancy and Rotation," ASME Heat Trans. Div., vol. 241, pp. 73-81, 1993.
11. K. C. Karki, P. S. Sathyamurthy, and S. V. Patankar, "Three- Dimensional Mixed Convection in a Chemical Vapor Deposition Reactor," ASME J. Heat Transfer, vol. 115, pp. 803-806, 1993.
12. H. Moffat and K. F. Jensen, "Complex Flow Phenomena in MOCVD Reactors: I. Horizontal Reactors," J. Cryst. Growth, vol. 77, pp. 108-119, 1986.
13. J. Quazzani and F. Rosenberger, "Three-Dimensional Modeling of Horizontal Chemical Vapor Deposition I. MOCVD at Atmospheric Pressure," J. Cryst. Growth, vol. 100, pp. 545-576, 1990. (Pubitemid 20683682)
14. E. P. Visser, C. R. Kleijn, C. A. M. Govers, C. J. Hoogendoorn, and L. J. Giling, "Return Flows in Horizontal MOCVD Reactors Studied with the use of TiO2 Particle Injection and Numerical Calculations," J. Cryst. Growth, vol. 94, pp. 924-946, 1989.
15. R. L. Mahajan, "Transport Phenomena in Chemical Vapor-Deposition Systems," Advances in Heat Transfer, Academic Press, vol. 28, pp. 339-425, 1996. (Pubitemid 126088516)
16. K. F. Jensen, E. O. Einset, and D. I. Fotiadis, "Flow Phenomena in Chemical Vapor Deposition of Thin Films," Ann. Rev. Fluid Mech., vol. 23, pp. 197-232, 1991.
17. R. J. Kee, A. Ting, and P. A. Spence, "Understanding and Improving Materials Processing Through Interpreting and Manipulating Predictive Models," Chemical Vapor Deposition of Refractory Metals and Ceramics III, Materials Research Society, vol. 363, p. 314, 1995.
18. L. L. Raja, R. J. Kee, R. Serban, and L. R. Petzold, "Computational Algorithm for Dynamic Optimization of Chemical Vapor Deposition Processes in Stagnation Flow Reactors," J. Electrochem. Soc., vol. 147, pp. 2718-2726, 2000.
19. R. P. Southwell, M. A. Mendicino, and E. G. Seebauer, "Optimization of Selective TiSi2 Chemical Vapor Deposition by Mechanistic Chemical Kinetics," J. Vac. Sci. Technol. A, vol. 14, pp. 928-934, 1996.
20. M.-J. Mouche, J.-L. Mermet, F. Pires, E. Richard, J. Torres, J. Palleau, and F. Braud, "Process Optimization of Copper MOCVD Using Modeling Experimental Design," Appl. Surf. Sci., vol. 91, pp. 129-133, 1995.
21. W. K. S. Chiu, Y. Jaluria, and N. G. Glumac, "Control Of Thin Film Growth In Chemical Vapor Deposition Manufacturing Systems: A Feasibility Study," J. Manufacturing Science and Engineering, vol. 124, pp. 715-724, 2002. (Pubitemid 35202596)
22. W. K. S. Chiu, Y. Jaluria, and N. G. Glumac, "Numerical Simulation of Chemical Vapor Deposition Processes Under Variable and Constant Property Approximations," Numerical Heat Transfer, vol. 37, pp. 113-132, 2000.
23. Q. Wang, H. Yoo, and Y. Jaluria, "Convection in a Horizontal Duct under Constant and Variable Property Formulations," Int. J. Heat Mass Transfer, vol. 46, pp. 297-310, 2003. (Pubitemid 37124206)
24. W. K. S. Chiu, C. J. Richards, and Y. Jaluria, "Flow Structure and Heat Transfer in a Horizontal Converging Channel Heated From Below," Physics of Fluids, vol. 12, pp. 2128-2136, 2000. (Pubitemid 30638817)
25. W. K. S. Chiu, C. J. Richards, and Y. Jaluria, "Experimental and Numerical Study of Conjugate Heat Transfer in a Horizontal Channel Heated From Below," ASME J. Heat Transfer, vol. 123, pp. 688-697, 2001. (Pubitemid 32770638)
26. W. K. S. Chiu and Y. Jaluria, "Effect of Buoyancy, Susceptor Motion, and Conjugate Transport in Chemical Vapor Deposition Systems," ASME J. Heat Transfer, vol. 121, pp. 757-761, 1999. (Pubitemid 30001210)
27. "FLUENT 6.1 Documentation," Fluent Inc, Lebanon, New Hampshire, USA.
28. "Mixture database, FLUENT 6.2.16," Fluent Inc, Lebanon, New Hampshire, USA.
29. S. V. Patankar, Numerical Heat Transfer and Fluid Flow: Hemisphere Publishing Corporation, 1980.
30. F. C. Eversteyn, P. J. W. Severin, C. H. J. van den Brekel, and H. L. Peek, "A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane on a Horizontal Reactor," J. Electrochem. Soc., vol. 117, pp. 925-931, 1970.
31. H. E. Rebenne and D. G. Bhat, "Review of CVD TiN coatings for wear-resistant applications: Deposition processes, properties and performance," Surface and Coatings Technology, vol. 63, pp. 1-13, 1994.
32. W. K. S. Chiu, "Simulation, Design and Optimization of Chemical Vapor Deposition systems for Advanced Materials," in Mechanical and Aerospace Engineering. vol. Ph.D New Brunswick, New Jersey: Rutgers University, 1999.
33. D. N. Joanes and C. A. Gill, "Comparing Measures of Sample Skewness and Kurtosis," Journal of the Royal Statistical Society (Series D): The Statistician, vol. 47, pp. 183-189, 1998. (Pubitemid 128469067)
34. P. Giesl, Construction of Global Lyapunov Functions Using Radial Basis Functions: Springer-Verlag Berlin Heidelberg, 2007.