Investigation into layers formed by selective transfer CMP mechanisms with atomic force microscope

Journal of Nanoparticle Research

Volumn 13, Issue 10, 2011, Pages 5519-5526

  Ilie, Filip ^a  

^a UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

Author keywords

Abrasive slurry particles; AFM; Asperity; CMP; Oxide; pH; Polishing surface; Removal mechanism; Selective transfer; Semiconductor manufacturing

Indexed keywords

ABRASIVE SLURRIES; AFM; ASPERITY; CMP; REMOVAL MECHANISM; SELECTIVE TRANSFER; SEMICONDUCTOR MANUFACTURING;

ABRASIVES; ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; COPPER; FRICTION; GLYCEROL; LUBRICANTS; MECHANISMS; NANOPROBES; POLISHING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SURFACE ANALYSIS; TRIBOLOGY;

SURFACES;

COPPER; GLYCEROL; LUBRICATING AGENT; METAL; SILICON NITRIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL PLANARIZATION; CHEMICAL REACTION; FRICTION; MATERIALS; MICROSCOPE; MORPHOLOGY; PARTICLE SIZE; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 80955137817     PISSN: 13880764     EISSN: 1572896X     Source Type: Journal    
DOI: 10.1007/s11051-011-0540-7     Document Type: Article

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