Structural analyses of thermal annealed SRO/SiO2 superlattices

Surface and Interface Analysis

Volumn 42, Issue 6-7, 2010, Pages 842-845

  Vanzetti, L ^a   Pucker, G ^a   Milita, S ^b   Barozzi, M ^a   Ghulinyan, M ^a   Bersani, M ^a  

^a ITC IRST   (Italy)

^b CNR   (Italy)

Author keywords

Ellipsometric spectroscopy; Nanocrystalline silicon; Secondary ion mass spectrometry; Superlattice; Thermal annealing; X ray photoelectron spectroscopy; X ray reflectivity

Indexed keywords

A-THERMAL; ANALYTICAL TECHNIQUES; ANNEALING TEMPERATURES; DIELECTRIC MATRIXES; ELLIPSOMETRIC SPECTRA; ELLIPSOMETRIC SPECTROSCOPY; FORM BIREFRINGENCE; HIGHER TEMPERATURES; LAYER MIXING; MEMORY DEVICE; PARTIAL OXIDATIONS; SILICON NANOCRYSTALS; SILICON RICH OXIDES; STRUCTURAL CHANGE; THERMAL-ANNEALING; X RAY REFLECTIVITY; XPS; XPS ANALYSIS;

ANNEALING; BIREFRINGENCE; CRYSTALLIZATION; DIELECTRIC MATERIALS; ELLIPSOMETRY; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE SILICON; PHASE MODULATION; PHASE SEPARATION; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFLECTION; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SILICON COMPOUNDS; SINTERING; SPECTROMETRY; SUPERLATTICES; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

SILICON OXIDES;

EID: 77954293126     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3380     Document Type: Conference Paper

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