The electrochemical behavior of tin-doped indium oxide during reduction in 0.3 M hydrochloric acid

Electrochimica Acta

Volumn 48, Issue 24, 2003, Pages 3599-3605

  Huang, C A ^a   Li, K C ^a   Tu, G C ^b   Wang, W S ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

EDS; FESEM; In Sn particle; Reduction product; Tin doped indium oxide; Voltammetric scanning

Indexed keywords

ANNEALING; DISSOLUTION; DOPING (ADDITIVES); GRAIN BOUNDARIES; HYDROCHLORIC ACID; IONS; SCANNING;

REDUCTION PRODUCTS;

TIN COMPOUNDS;

EID: 0141793058     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0013-4686(03)00480-8     Document Type: Article

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