Effect of annealing temperature on magnetic property of Si 1 - XCrx thin films

Thin Solid Films

Volumn 520, Issue 2, 2011, Pages 769-773

  Zhang, Wenyong ^a   Guo, Liping ^a   Peng, Guoliang ^a   Li, Tiecheng ^a   Feng, Shixuan ^a   Zhou, Zhongpo ^a   Peng, Ting ^a   Quan, Zuci ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

Diluted magnetic semiconductors; Magnetron sputtering; Raman spectra; Rapid thermal annealing; X ray diffraction

Indexed keywords

ANNEALING PROCESS; ANNEALING TEMPERATURES; AS-GROWN FILMS; CRYSTALLINITIES; DILUTED MAGNETIC SEMICONDUCTORS; POLYCRYSTALLINE-SI; ROOM TEMPERATURE;

AMORPHOUS FILMS; AMORPHOUS MATERIALS; DIFFRACTION; HYSTERESIS LOOPS; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MAGNETISM; POLYSILICON; PRECIPITATION (CHEMICAL); RAMAN SCATTERING; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; SATURATION MAGNETIZATION; THIN FILMS; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80755140685     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.350     Document Type: Conference Paper

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