Magnetic and transport properties of Mn-implanted Ge/Si quantum dots

Solid State Communications

Volumn 140, Issue 3-4, 2006, Pages 185-187

  Yoon, I T ^a   Park, C J ^a   Lee, S W ^a   Kang, T W ^a   Fu, D J ^b   Fan, X J ^b  

^a Dongguk University   (South Korea)

^b WUHAN UNIVERSITY   (China)

Author keywords

A. (SiGe)Mn; A. Diluted magnetic semiconductor; D. Impurities in semiconductor; D. Magnetic properties

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ION IMPLANTATION; MAGNETIC PROPERTIES; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM; SQUIDS; TRANSPORT PROPERTIES;

DILUTED MAGNETIC SEMICONDUCTORS; FERROMAGNETIC ORDERING; SUPERCONDUCTING QUANTUM INTERFERENCE DEVICE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33748857175     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2006.07.040     Document Type: Article

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