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Volumn 520, Issue 2, 2011, Pages 871-875
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An X-ray photoelectron spectroscopy study of ultra-thin oxynitride films
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Author keywords
Plasma nitridation; Silicon oxynitrides; Thickness measurement; Thin films; XPS
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Indexed keywords
EXIT ANGLES;
INELASTIC MEAN FREE PATH;
ITERATIVE PROCEDURES;
MATRIX;
NITRIDED LAYER;
NITROGEN CONTENT;
NITROGEN INCORPORATION;
OXYNITRIDE FILMS;
OXYNITRIDES;
PLASMA NITRIDATION;
RELATIVE SENSITIVITY FACTOR;
SILICON OXYNITRIDES;
ULTRA-THIN;
X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES;
ELECTRON TRANSPORT PROPERTIES;
NITRIDATION;
NITRIDES;
PHOTOELECTRICITY;
PHOTONS;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON OXIDES;
THICKNESS MEASUREMENT;
TRANSPORT PROPERTIES;
X RAY PHOTOELECTRON SPECTROSCOPY;
PHOTOELECTRON SPECTROSCOPY;
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EID: 80755132250
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.04.161 Document Type: Conference Paper |
Times cited : (16)
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References (15)
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