Internal structure of planar electrochemical doping fronts in organic semiconductors

Journal of Physical Chemistry C

Volumn 115, Issue 44, 2011, Pages 21915-21926

  Modestov, M ^a   Bychkov, V ^a   Valiev, D ^a   Marklund, M ^a  

^a UMEÅ UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL THEORY; ASYMPTOTIC BEHAVIORS; COMPLEX STRUCTURE; CRITICAL POINTS; DRIFT-DIFFUSION MODEL; ELECTROCHEMICAL DOPING; ELECTRONS AND HOLES; EXPERIMENTAL DATA; EXPERIMENTAL MEASUREMENTS; INJECTION BARRIERS; INTERNAL STRUCTURE; LIGHT-EMITTING ELECTROCHEMICAL CELL; NERNST EQUATION; NUMERICAL SOLUTION; QUANTITATIVE AGREEMENT; THEORETICAL PREDICTION; UN-DOPED REGIONS;

ELECTRIC FIELDS; ELECTROCHEMICAL CELLS; ELECTROLYTIC CELLS; HOLE MOBILITY;

SEMICONDUCTOR DOPING;

EID: 80455174474     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp205415y     Document Type: Article

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