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Volumn , Issue , 2011, Pages

0.4V SRAM with bit line swing suppression charge share hierarchical bit line scheme

Author keywords

[No Author keywords available]

Indexed keywords

BIT LINES; CHARGE SHARING; FOUNDRY TECHNOLOGY; HIERARCHICAL BIT LINE; LOW VOLTAGE OPERATION; SWING SUPPRESSION;

EID: 80455168120     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CICC.2011.6055398     Document Type: Conference Paper
Times cited : (9)

References (8)
  • 1
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    • Microwatt Embedded Processor Platform for Medical System-on-Chip Applications
    • June
    • Srinivasa R. Sridhara, et al., "Microwatt Embedded Processor Platform for Medical System-on-Chip Applications," IEEE Symposium on VLSI Circuits, pp. 15-16, June 2010.
    • (2010) IEEE Symposium on VLSI Circuits , pp. 15-16
    • Sridhara, S.R.1
  • 2
    • 70449440865 scopus 로고    scopus 로고
    • A 45nm 0.6V cross-point 8T SRAM with Negative Biased Read/Write assist
    • June
    • M. Yabuuchi, et al., "A 45nm 0.6V cross-point 8T SRAM with Negative Biased Read/Write assist" IEEE Symposium on VLSI Circuits, pp. 158-159, June 2009.
    • (2009) IEEE Symposium on VLSI Circuits , pp. 158-159
    • Yabuuchi, M.1
  • 3
    • 58149236853 scopus 로고    scopus 로고
    • An 8Mb SRAM in 45nm SOI Featuring a Two-Stage Sensing Scheme and Dynamic Power Management
    • Jan.
    • V. Ramadurai, et al., "An 8Mb SRAM in 45nm SOI Featuring a Two-Stage Sensing Scheme and Dynamic Power Management" IEEE Journal of Solid-State Circuits, Vol. 44, No. 1, pp. 155-162, Jan. 2009.
    • (2009) IEEE Journal of Solid-State Circuits , vol.44 , Issue.1 , pp. 155-162
    • Ramadurai, V.1
  • 4
    • 51949090717 scopus 로고    scopus 로고
    • A 45nm Single-port and Dual-port SRAM family with Robust Read/Write Stabilizing Circuitry under DVFS Environment
    • June
    • K. Nii, et al., "A 45nm Single-port and Dual-port SRAM family with Robust Read/Write Stabilizing Circuitry under DVFS Environment" IEEE Symposium on VLSI Circuits, pp. 212-213, June 2008.
    • (2008) IEEE Symposium on VLSI Circuits , pp. 212-213
    • Nii, K.1
  • 5
    • 78650314880 scopus 로고    scopus 로고
    • A 4.4pJ/Access 80MHz, 2K Word x 64b Memory with Write Masking Feature and Variability Resilient Multi-Sized Sense Amplifier Redundancy for Wireless Sensor Nodes Applications
    • Sep
    • V. Sharma, et al., "A 4.4pJ/Access 80MHz, 2K Word x 64b Memory with Write Masking Feature and Variability Resilient Multi-Sized Sense Amplifier Redundancy for Wireless Sensor Nodes Applications" IEEE ESSCIRC, pp. 358-361, Sep 2010.
    • (2010) IEEE ESSCIRC , pp. 358-361
    • Sharma, V.1
  • 6
    • 58049120540 scopus 로고    scopus 로고
    • A 45nm single power supply SRAM supporting low voltage operation down to 0.6V
    • Sep
    • S. Barasinski, et al., "A 45nm single power supply SRAM supporting low voltage operation down to 0.6V" IEEE ESSCIRC, pp.502-505, Sep 2008
    • (2008) IEEE ESSCIRC , pp. 502-505
    • Barasinski, S.1
  • 7
    • 51949112103 scopus 로고    scopus 로고
    • A 0.7V Single-Supply SRAM with 0.495um2 cell in 65nm technology utilizing Self-Write-Back Sense Amplifier and Cascaded Bit Line Scheme
    • June
    • K. Kushida, et al., "A 0.7V Single-Supply SRAM with 0.495um2 cell in 65nm technology utilizing Self-Write-Back Sense Amplifier and Cascaded Bit Line Scheme" IEEE Symposium on VLSI Circuits, pp. 46-47, June 2008.
    • (2008) IEEE Symposium on VLSI Circuits , pp. 46-47
    • Kushida, K.1
  • 8
    • 77958002030 scopus 로고    scopus 로고
    • Multi-step Word-line Control Technology in Hierarchical Cell Architecture for Scaled-down High-density SRAMs
    • June
    • K. Takeda, et al., "Multi-step Word-line Control Technology in Hierarchical Cell Architecture for Scaled-down High-density SRAMs" IEEE Symposium on VLSI Circuits, pp. 101-102, June 2010.
    • (2010) IEEE Symposium on VLSI Circuits , pp. 101-102
    • Takeda, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.