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1
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77958019331
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Microwatt Embedded Processor Platform for Medical System-on-Chip Applications
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June
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Srinivasa R. Sridhara, et al., "Microwatt Embedded Processor Platform for Medical System-on-Chip Applications," IEEE Symposium on VLSI Circuits, pp. 15-16, June 2010.
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(2010)
IEEE Symposium on VLSI Circuits
, pp. 15-16
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Sridhara, S.R.1
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2
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70449440865
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A 45nm 0.6V cross-point 8T SRAM with Negative Biased Read/Write assist
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June
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M. Yabuuchi, et al., "A 45nm 0.6V cross-point 8T SRAM with Negative Biased Read/Write assist" IEEE Symposium on VLSI Circuits, pp. 158-159, June 2009.
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(2009)
IEEE Symposium on VLSI Circuits
, pp. 158-159
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Yabuuchi, M.1
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3
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58149236853
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An 8Mb SRAM in 45nm SOI Featuring a Two-Stage Sensing Scheme and Dynamic Power Management
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Jan.
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V. Ramadurai, et al., "An 8Mb SRAM in 45nm SOI Featuring a Two-Stage Sensing Scheme and Dynamic Power Management" IEEE Journal of Solid-State Circuits, Vol. 44, No. 1, pp. 155-162, Jan. 2009.
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IEEE Journal of Solid-State Circuits
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, Issue.1
, pp. 155-162
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Ramadurai, V.1
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4
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51949090717
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A 45nm Single-port and Dual-port SRAM family with Robust Read/Write Stabilizing Circuitry under DVFS Environment
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June
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K. Nii, et al., "A 45nm Single-port and Dual-port SRAM family with Robust Read/Write Stabilizing Circuitry under DVFS Environment" IEEE Symposium on VLSI Circuits, pp. 212-213, June 2008.
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(2008)
IEEE Symposium on VLSI Circuits
, pp. 212-213
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Nii, K.1
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5
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78650314880
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A 4.4pJ/Access 80MHz, 2K Word x 64b Memory with Write Masking Feature and Variability Resilient Multi-Sized Sense Amplifier Redundancy for Wireless Sensor Nodes Applications
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Sep
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V. Sharma, et al., "A 4.4pJ/Access 80MHz, 2K Word x 64b Memory with Write Masking Feature and Variability Resilient Multi-Sized Sense Amplifier Redundancy for Wireless Sensor Nodes Applications" IEEE ESSCIRC, pp. 358-361, Sep 2010.
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(2010)
IEEE ESSCIRC
, pp. 358-361
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Sharma, V.1
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6
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58049120540
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A 45nm single power supply SRAM supporting low voltage operation down to 0.6V
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Sep
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S. Barasinski, et al., "A 45nm single power supply SRAM supporting low voltage operation down to 0.6V" IEEE ESSCIRC, pp.502-505, Sep 2008
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(2008)
IEEE ESSCIRC
, pp. 502-505
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Barasinski, S.1
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7
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51949112103
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A 0.7V Single-Supply SRAM with 0.495um2 cell in 65nm technology utilizing Self-Write-Back Sense Amplifier and Cascaded Bit Line Scheme
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June
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K. Kushida, et al., "A 0.7V Single-Supply SRAM with 0.495um2 cell in 65nm technology utilizing Self-Write-Back Sense Amplifier and Cascaded Bit Line Scheme" IEEE Symposium on VLSI Circuits, pp. 46-47, June 2008.
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(2008)
IEEE Symposium on VLSI Circuits
, pp. 46-47
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Kushida, K.1
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8
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77958002030
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Multi-step Word-line Control Technology in Hierarchical Cell Architecture for Scaled-down High-density SRAMs
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June
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K. Takeda, et al., "Multi-step Word-line Control Technology in Hierarchical Cell Architecture for Scaled-down High-density SRAMs" IEEE Symposium on VLSI Circuits, pp. 101-102, June 2010.
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(2010)
IEEE Symposium on VLSI Circuits
, pp. 101-102
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Takeda, K.1
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