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Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 16, 2011, Pages

Modeling spin transport in electrostatically-gated lateral-channel silicon devices: Role of interfacial spin relaxation

(2) Li, Jing a Appelbaum, Ian a

a Bldg 142 (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80455129278 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.84.165318 Document Type: Article

Times cited : (39)

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