Ferroelectric properties of Mn-doped BiFeO3 thin films

Current Applied Physics

Volumn 11, Issue 3 SUPPL., 2011, Pages

  Lee, M H ^a   Park, J S ^a   Kim, D J ^a   Cho, H J ^a   Sung, Y S ^a   Kim, M H ^a   Cho, J H ^a   Choi, H I ^a   Do, D ^a   Kim, W J ^a   Kim, S S ^a   Choi, B C ^b   Song, T K ^a  

^a Changwon National University   (South Korea)

^b Pukyong National University   (South Korea)

Author keywords

Bi excess; BiFeO3; Ferroelectric; Leakage current; Mn doping; Orientation

Indexed keywords

BI-EXCESS; BIFEO3; COERCIVE FIELD; DEPOSITION TEMPERATURES; FERROELECTRIC; FERROELECTRIC PROPERTY; HIGH ELECTRIC FIELDS; LARGE-GRAIN; MN-DOPED BIFEO; MN-DOPING; PREFERRED ORIENTATIONS; PT(111); REMNANT POLARIZATIONS;

ELECTRIC FIELDS; FERROELECTRICITY; MANGANESE; MANGANESE OXIDE; PLATINUM; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING; THIN FILMS; VAPOR DEPOSITION;

FERROELECTRIC FILMS;

EID: 80255129326     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.03.024     Document Type: Conference Paper

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