SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 606, Issue 1-2, 2012, Pages

Epitaxy of m-plane GaN on nanoscale patterned c-plane sapphire substrates

(4) Lin, Yu Sheng a Lin, Kung Hsuan b Chang, Yu Ming b Yeh, J Andrew a,c

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b NATIONAL TAIWAN UNIVERSITY (Taiwan)

c INSTRUMENT TECHNOLOGY RESEARCH CENTER (Taiwan)

Author keywords

Heterostructures; Nonpolar GaN; Patterned sapphire; Semiconductors

Indexed keywords

ATOMIC FORCE MICROSCOPES; C-PLANE SAPPHIRE SUBSTRATES; ETCHING METHOD; GAN EPILAYERS; M-PLANE; NANO PATTERN; NANO SCALE; NATURAL LITHOGRAPHY; NON-POLAR; NONPOLAR GAN; PATTERNED SAPPHIRE; PATTERNED SAPPHIRE SUBSTRATE; ROCKING CURVES; SEM AND TEM;

ATOMIC FORCE MICROSCOPY; EPILAYERS; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; PLASMA ETCHING; SUBSTRATES; SURFACE ROUGHNESS; X RAY DIFFRACTION;

SAPPHIRE;

EID: 80255123729 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2011.08.005 Document Type: Article

Times cited : (19)

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