150-GHz RF SOI-CMOS technology in ultrathin regime on organic substrate

IEEE Electron Device Letters

Volumn 32, Issue 11, 2011, Pages 1510-1512

  Des Etangs Levallois, Aurélien Lecavelier ^a   Dubois, Emmanuel ^a   Lesecq, Marie ^a   Danneville, François ^a   Poulain, Laurent ^a   Tagro, Yoann ^a   Lepilliet, Sylvie ^a   Gloria, Daniel ^b   Raynaud, Christine ^b   Troadec, David ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b STMICROELECTRONICS   (France)

Author keywords

CMOS; Organic substrate; Plastic; Thin film

Indexed keywords

ACTIVE LAYER; BURIED OXIDE LAYERS; CMOS; DIE STACK; MAXIMUM OSCILLATION FREQUENCY; MOSFETS; MULTILAYER STACKS; NMOSFET; NMOSFETS; ORGANIC SUBSTRATE; P-MOSFETS; PLASTIC SUBSTRATES; POLYETHYLENE NAPHTHALATE; RF PERFORMANCE; ULTRA-THIN;

CMOS INTEGRATED CIRCUITS; ELECTRON BEAM LITHOGRAPHY; FILM PREPARATION; MOSFET DEVICES; THIN FILMS;

SUBSTRATES;

EID: 80054970851     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2166241     Document Type: Article

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