Structural investigation and electronic band transitions of nanostructured TiO2 thin films

Crystal Research and Technology

Volumn 46, Issue 11, 2011, Pages 1207-1214

  Sebnem Cetin, S ^a   Corekci, S ^b   Cakmak, M ^a   Ozcelik, S ^a  

^a GAZI UNIVERSITY   (Turkey)

^b KIRKLARELI UNIVERSITY   (Turkey)

Author keywords

atomic force microscopy; photoluminescence; titanium dioxide; X ray diffraction

Indexed keywords

AFM; AIR ATMOSPHERE; ANNEALED FILMS; ANNEALING TEMPERATURES; CRYSTALLINE PHASE; CRYSTALLINE QUALITY; DEPOSITED FILMS; DISLOCATION DENSITIES; ELECTRONIC BAND; FT-IR-SPECTROMETERS; GRAIN SIZE; MICRO-STRAIN; NANOSTRUCTURED TIO; REACTIVE DC MAGNETRON SPUTTERING; ROOM TEMPERATURE; RUTILE PHASE; RUTILE PHASIS; SI SUBSTRATES; STRUCTURAL AND MORPHOLOGICAL PROPERTIES; STRUCTURAL INVESTIGATION; THERMAL-ANNEALING; TIO; TRANSMITTANCE SPECTRA; XRD MEASUREMENTS;

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; CRYSTALLINE MATERIALS; DIFFRACTION; OXIDE MINERALS; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SPECTROMETERS; THIN FILMS; TITANIUM; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

TITANIUM DIOXIDE;

EID: 80054948292     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.201100195     Document Type: Article

References (34)

1. B. E. Yoldas, and, T. W. O'Keeffe, Appl. Optics 18, 3133 (1979).
2. L. Martinu, and, D. Poitras, J. Vac. Sci. Technol. A 18, 2619 (2000).
3. D. Yoo, I. Kim, S. Kim, C. H. Hahn, C. Lee, and, S. Cho, Appl. Surf. Sci. 253, 3888 (2007).
4. D. Mardare, N. Iftimie, M. Crişan, M. Rǎileanu, A. Yildiz, T. Coman, K. Pomoni, and, A. Vomvas, J. Non-Cryst. Solids 357, 1774 (2011).
5. X. Zhang, Y. Lin, D. He, J. Zhang, Z. Fan, and, T. Xie, Chem. Phys. Lett. 504, 71 (2011).
6. Q. Chen, Y. Qian, Z. Chen, Y. Jia, G. Zhou, X. Li, and, Y. Zhang, Phys. Status Solidi A 156, 381 (1996).
7. R. Ayouchi, C. Casteleiro, R. Schwarz, J. R. Barrado, and, F. Martin, Phys. Status Solidi C 7, 933 (2010).
8. B. C. Kang, S. B. Lee, and, J. H. Boo, Surf. Coat. Technol. 131, 88 (2000).
9. D. Mardare, and, G. I. Rusu, Mat. Sci. Eng. B 75, 68 (2000).
10. A. Verma, A. K. Srivastava, A. K. Bakhshi, R. Kishore, and, S. A. Agnihotry, Mater. Lett. 59, 3423 (2005).
11. N. Inoue, H. Yuasa, and, M. Okoshi, Appl. Surf. Sci. 197-198, 393 (2002).
12. A. Elfanaoui, E. Elhamri, L. Boulkaddat, A. Ihlal, K. Bouabid, L. Laanab, A. Taleb, and, X. Portier, Int. J. Hydrogen Energ. 36, 4130 (2011).
13. M. I. B. Bernardi, E. J. H. Lee, P. N. Lisboa-Filho, E. R. Leite, E. Longo, and, J. A. Varela, Mat. Res. 4, 223 (2001).
14. E. Oh, B. Kim, H. Park, and, Y. Park, Appl. Phys. Lett. 73, 1883 (1998).
15. P. Kofstad, Nonstoichiometry, Diffusion and Electrical Conductivity in Binary Metal Oxides (Krieger, Malabar, 1983).
16. B. Huber, A. Brodyanski, M. Scheib, A. Orendorz, C. Ziegler, and, H. Gnaser, Thin Solid Films 472, 114 (2005).
17. K. Hoshino, N. L. Peterson, and, C. L. Wiley, J. Phys. Chem. Solids 46, 1397 (1985).
18. K. Wakabayashi, Y. Yamaguchi, and, T. Sekiya, J. Lumin. 112, 50 (2005).
19. K. Iijima, M. Goto, S. Enomoto, H. Kunugita, K. Ema, M. Tsukamoto, N. Ichikawa, and, H. Sakama, J. Lumin. 128, 911 (2008).
20. H. Altuntas, A. Bengi, U. Aydemir, T. Asar, S. S. Cetin, I. Kars, S. Altindal, and, S. Ozcelik, Mat. Sci. Semicond. Process. 12, 224 (2009).
21. Y. R. Park, and, K. J. Kim, Thin Solid Films 484, 34 (2005).
22. C. Suryanarayana, and, M. G. Norton, X-Ray Diffraction: A practical Approach (Plenum Press, New York, 1998).
23. H. P. Klug, and, L. E. Alexander, X-ray diffraction procedures for polycrystalline and amorphous materials (Wiley, New York, 1974).
24. B. Karunagaran, R. T. R. Kumar, D. Mangalaraj, S. K. Narayandass, and, G. M. Rao, Cryst. Res. Technol. 37, 1285 (2002).
25. S. Serio, M. E. M. Jorge, M. J. P. Maneira, and, Y. Nunes, Mater. Chem. Phys. 126, 73 (2011).
26. S. Çörekçi, Z. Tekeli, M. Çakmak, S. Özçelik, Y. Dinç, O. Zeybek, and, E. Özbay, Mat. Sci. Semicond. Proc. 12, 238 (2009).
27. N. R. Mathews, E. R. Morales, M. A. Cortes-Jacome, and, J. A. T. Antonio, Sol. Energy 83, 1499 (2009).
28. B. Karunagaran, R. T. R. Kumar, V. S. Kumar, D. Mangalaraj, Sa. K. Narayandass, and, G. M. Rao, Mat. Sci. Semicon. Proc. 6, 547 (2003).
29. P. R. McCurdy, L. J. Sturgess, S. Kohli, and, E. R. Fisher, Appl. Surf. Sci. 233, 69 (2004).
30. E. S. Andres, M. Toledano-Luque, A. del Prado, M. A. Navacerrada, I. Martil, and, G. Gonzalez-Diaz, J. Vac. Sci. Technol. A 23, 1523 (2005).
31. D. Li, N. Ohashi, S. Hishita, T. Kolodiazhnyi, and, H. Haneda, J. Solid State Chem. 178, 3293 (2005).
32. J. Liqiang, S. Xiaojun, C. Weimin, X. Zili, D. Yaoguo, and, F. Honggang, J. Phys. Chem. Solids 64, 615 (2003).
33. D. Fang, K. Huang, S. Liu, J. Huang, and J. Braz. Chem. Soc. 19, 1059 (2008).
34. T. Sekiya, S. Kamei, and, S. Kurita, J. Lumin. 87, 1140 (2000).