Sequential multiplication of dislocation sources along a crack front revealed by high-voltage electron microscopy and tomography

Journal of Materials Research

Volumn 26, Issue 4, 2011, Pages 508-513

  Tanaka, Masaki ^a   Sadamatsu, Sunao ^a   Liu, Grace S ^b   Nakamura, Hiroto ^a   Higashida, Kenji ^a   Robertson, Ian M ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

dislocations; fracture; transmission electron microscopy (TEM)

Indexed keywords

CRACK FRONTS; CRACK TIP DISLOCATIONS; DISLOCATION SOURCES; HIGH VOLTAGE ELECTRON MICROSCOPY; INITIAL STAGES; LOCAL STRESS; SINGLE CRYSTAL SILICON; THREE-DIMENSIONAL STRUCTURE;

CRACK TIPS; CRACKS; CRYSTAL STRUCTURE; SILICON WAFERS; SINGLE CRYSTALS; TOMOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATIONS (CRYSTALS);

EID: 80054920004     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2010.99     Document Type: Article

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