Properties of unrelaxed InAs1-XSbX alloys grown on compositionally graded buffers

Applied Physics Letters

Volumn 99, Issue 14, 2011, Pages

  Belenky, G ^a   Donetsky, D ^a   Kipshidze, G ^a   Wang, D ^a   Shterengas, L ^a   Sarney, W L ^b   Svensson, S P ^b  

^a STONY BROOK UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONALLY GRADED BUFFERS; IN-PLANE LATTICES; INAS; MINORITY CARRIER LIFETIMES; PHOTOLUMINESCENCE PEAK;

BUFFER LAYERS; CARRIER LIFETIME; GALLIUM ALLOYS; INDIUM ARSENIDE; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL WAVEGUIDES;

SEMICONDUCTING INDIUM;

EID: 80053997832     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3650473     Document Type: Article

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