Enhancement of the quality of InAsSb epilayers using InAsSb graded and InSb buffer layers grown by hot wall epitaxy

Semiconductor Science and Technology

Volumn 20, Issue 10, 2005, Pages 1064-1067

  Nakamura, S ^a   Jayavel, P ^a   Kobayashi, Y ^a   Arafune, K ^a   Koyama, T ^a   Kumagawa, M ^a   Hayakawa, Y ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ELECTRIC PROPERTIES; ELECTRON MOBILITY; HALL EFFECT; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE;

EPILAYERS; HOT WALL EPITAXY; LATTICE MISMATCH; X-RAY ROCKING CURVE;

INDIUM COMPOUNDS;

EID: 25444512068     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/10/013     Document Type: Article

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