SCOPUS 정보 검색 플랫폼

Volumn 97, Issue 17, 2010, Pages

Current on/off ratio enhancement through the electrical burning process in ambient with/without oxygen for the generation of high-performance aligned single-walled carbon nanotube field effect transistors

(5) Kim, Sunkook a Park, In Su b Kwon, Hyuk Jun a Chang, Woo Jin c Lee, Sang Woo b

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

b Yonsei University Wonju (South Korea)

c University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNED SINGLE-WALLED CARBON NANOTUBES; ATOMIC LAYER DEPOSITED; BURNING PROCESS; DRAIN BIAS; ELECTRICAL BREAKDOWN; EXCELLENT PERFORMANCE; GATE ELECTRODES; HIGH SELECTIVITY; LOCAL OXIDATION; METALLIC NANOTUBES; ON/OFF RATIO; P-TYPE; REVERSE GATE; SEMI-CONDUCTING NANOTUBES;

MESFET DEVICES; OXYGEN; SINGLE-WALLED CARBON NANOTUBES (SWCN);

FIELD EFFECT TRANSISTORS;

EID: 78149459235 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3504689 Document Type: Article

Times cited : (3)

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