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Materials Science and Engineering: A

Volumn 528, Issue 29-30, 2011, Pages 8715-8722

Nanomechanical properties of thick porous silicon layers grown on p- and p+-type bulk crystalline Si

(4) Charitidis, C A a Skarmoutsou, A a Nassiopoulou, A G b Dragoneas, A b

a NATIONAL TECHNICAL UNIVERSITY OF ATHENS (Greece)

b INSTITUTE OF MICROELECTRONICS (Greece)

Author keywords

Hardness; Nanoindentation; Porous silicon membranes; Young's modulus

Indexed keywords

ANISOTROPY; CRYSTALLINE MATERIALS; ELASTIC MODULI; FIELD EMISSION MICROSCOPES; MICROSTRUCTURE; NANOINDENTATION; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; WEAR RESISTANCE;

BULK CRYSTALLINE; NANO INDENTATION; NANOMECHANICAL PROPERTY; P-TYPE; P-TYPE SI; POROUS SI; POROUS SILICON MEMBRANE; SI LAYER; SILICON MEMBRANES; YOUNG MODULUS;

HARDNESS;

EID: 80053649308 PISSN: 09215093 EISSN: None Source Type: Journal
DOI: 10.1016/j.msea.2011.08.051 Document Type: Article

Times cited : (10)

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