High mobility, low voltage operating C60 based n-type organic field effect transistors

Synthetic Metals

Volumn 161, Issue 19-20, 2011, Pages 2058-2062

  Schwabegger, G ^a   Ullah, Mujeeb ^a   Irimia Vladu, M ^a   Baumgartner, M ^a   Kanbur, Y ^b   Ahmed, R ^a   Stadler, P ^a   Bauer, S ^a   Sariciftci, N S ^a   Sitter, H ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

C60; Dielectric; High mobility; Low voltage; OFET

Indexed keywords

ALUMINUM OXIDES; BENZOCYCLOBUTENE; BI-LAYER; C60; DIELECTRIC; DIELECTRIC LAYER; FIELD-EFFECT MOBILITIES; HIGH DIELECTRIC CONSTANTS; HIGH MOBILITY; LOW VOLTAGE; LOW VOLTAGE OPERATION; LOW VOLTAGES; METAL OXIDES; METAL-OXIDE; ORDERS OF MAGNITUDE; ORGANIC MATERIALS; ORGANIC-ORGANIC INTERFACE; PARYLENE FILM; PASSIVATION LAYER; PER UNIT; THIN CAPPING;

BUTENES; DIELECTRIC MATERIALS; GATE DIELECTRICS; INTERFACES (MATERIALS); METALLIC COMPOUNDS; OXIDE FILMS; PASSIVATION; TRANSISTORS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 80053573765     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2011.06.042     Document Type: Article

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