Pentacene transistor encapsulated by poly-para-xylylene behaving as gate dielectric insulator and passivation film

Applied Physics Letters

Volumn 87, Issue 18, 2005, Pages 1-3

  Tsukagoshi, Kazuhito ^a,b   Yagi, Iwao ^a   Shigeto, Kunji ^a   Yanagisawa, Keiichi ^a   Tanabe, Jun ^a,c   Aoyagi, Yoshinobu ^a,c  

^a RIKEN   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; CHEMICAL VAPOR DEPOSITION; DIELECTRIC DEVICES; ELECTRIC INSULATORS; ELECTRODES; PASSIVATION; THIN FILMS;

METAL ELECTRODES; POLY-PARA-XYLYLENE FILMS; TRANSMISSION-LINE MODEL;

THIN FILM TRANSISTORS;

EID: 27344438744     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2120894     Document Type: Article

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