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Volumn 23, Issue 19, 2011, Pages 4375-4383

Tl2Hg3Q4 (Q = S, Se, and Te): High-density, wide-band-gap semiconductors

Author keywords

cadmium telluride; chalcogenide; crystal growth; X ray detector

Indexed keywords

BAND GAPS; BAND STRUCTURE CALCULATION; CHALCOGENS; CHARGE BALANCING; CONDUCTION-BAND MINIMUM; ENERGY BANDGAPS; EXPERIMENTAL OBSERVATION; HIGH DENSITY; INDIRECT BAND GAP; INFINITE CHAINS; ISOSTRUCTURAL; LAYERED STRUCTURES; MONOCLINIC CELL; ORBITAL CHARACTER; ORBITALS; SPACE GROUPS; SULFUR ANALOG; VALENCE-BAND MAXIMUMS; WIDE-BAND-GAP SEMICONDUCTOR; X-RAY DETECTOR;

EID: 80053532635     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm2019857     Document Type: Article
Times cited : (50)

References (68)
  • 41
    • 80053464868 scopus 로고    scopus 로고
    • Cie STOE & Cie GmbH: Darmstadt, Germany
    • STOE; Cie STOE & Cie GmbH: Darmstadt, Germany, 2006.
    • (2006) STOE


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.