A road to hydrogenating graphene by a reactive ion etching plasma

Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

  Wojtaszek, M ^a   Tombros, N ^a   Caretta, A ^a   Van Loosdrecht, P H M ^a   Van Wees, B J ^a  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON-HYDROGEN PLASMAS; BI-LAYER; DEFECT CONCENTRATIONS; ELECTRONIC TRANSPORT MEASUREMENTS; GRAPHENE SHEETS; HYDROGEN IONS; HYDROGENATION PROCESS; MEAN FREE PATH; PLASMA CONDITIONS; PLASMA ELECTRONS; PLASMA SYSTEMS; REACTIVE ION; SELF-BIAS;

GRAPHENE; HYDROGEN; HYDROGENATION; IONS; PLASMA DEVICES; PLASMA THEORY; RAMAN SPECTROSCOPY;

REACTIVE ION ETCHING;

EID: 80053503102     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3638696     Document Type: Article

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