Spin dependence of electron effective masses in InGaAs/InAlAs quantum well

Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

  Wei, L M ^a   Gao, K H ^a,b   Liu, X Z ^a   Zhou, W Z ^c   Cui, L J ^d   Zeng, Y P ^d   Yu, G ^a   Yang, R ^a   Lin, T ^a   Shang, L Y ^a,b   Guo, S L ^a   Dai, N ^a   Chu, J H ^a,b   Austing, D G ^e  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b EAST CHINA NORMAL UNIVERSITY   (China)

^c GUANGXI UNIVERSITY   (China)

^d INSTITUTE OF SEMICONDUCTORS   (China)

^e NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL METHOD; EFFECTIVE MASS; ELECTRON EFFECTIVE MASS; FFT ANALYSIS; INGAAS/INALAS QUANTUM WELL; MAGNETO-TRANSPORT MEASUREMENT; QUANTUM WELL; SIMULTANEOUS FITTING; SPIN DEPENDENCE; SPIN-DOWN; SPIN-DOWN ELECTRONS; SPIN-POLARIZED FERMI LIQUID; SPIN-UP; ZERO-FIELD SPIN SPLITTING;

FAST FOURIER TRANSFORMS; FERMI LIQUIDS; GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

TWO DIMENSIONAL ELECTRON GAS;

EID: 80053498135     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3633509     Document Type: Article

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