Enhancement of electron and hole effective masses in back-gated GaAs Alx Ga1-x As quantum wells

Physical Review B - Condensed Matter and Materials Physics

Volumn 76, Issue 20, 2007, Pages

  Nomura, S ^a,b,c   Yamaguchi, M ^b,c   Akazaki, T ^b,c   Tamura, H ^b,c   Maruyama, T ^d   Miyashita, S ^d   Hirayama, Y ^c,e  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NTT Basic Research Laboratories   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d NTT Advance Technology Corporation   (Japan)

^e TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36248986752     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.76.201306     Document Type: Article

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