Mass enhancement of two-dimensional electrons in thin-oxide si-mosfet’s

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 15, 1999, Pages 10208-10211

  Draper, B L ^b   Tsui, D C ^a  

^a Princeton University   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001253899     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.10208     Document Type: Article

References (11)

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4. The error bar represents one standard statistical deviation from data fitting. The error at higher density is smaller. The trend is real.
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11. The period of SdH oscillations differs by approximately (Formula presented) at the two angles in Fig. 33. There are several sources contributing to the difference. The first and the most important one is the uncertainty of the tilted angle, about (Formula presented) from the uncontrollable backlash of the gear in our probe. The second is due to the large Landau-level broadening and nonzero spin splitting at zero angle in our samples, which is also responsible for the large error bar in the g factor. Under this circumstance, the maxima of the SdH oscillations do not necessarily occur exactly at (Formula presented) Instead, they can happen in a certain range of tilted angle. Finally, deformation of the electron wave function due to the large in-plane B field may also change the oscillation period for the two tilted angles with the same perpendicular B field.