Metamorphic In020Ga0. 80As p-i-n photodetectors grown on GaAs substrates for near infrared applications

Optics Express

Volumn 19, Issue 8, 2011, Pages 7280-7288

  Swaminathan, K ^a   Yang, L M ^a   Grassman, T J ^a   Tabares, G ^b   Guzman, A ^b   Hierro, A ^b   Mills, M J ^a   Ringel, S A ^a  

^a The Ohio State University   (United States)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DETECTORS; ENERGY GAP; GALLIUM ARSENIDE; INFRARED DEVICES; NEODYMIUM LASERS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING GALLIUM; SUBSTRATES; YTTERBIUM;

1064 NM; BAND GAPS; DEVICE PERFORMANCE; GAAS SUBSTRATES; INGAAS DETECTORS; INP TECHNOLOGY; LASER WAVELENGTH; METAMORPHIC IN; ND: YAG; NEAR INFRARED; NEAR-INFRARED APPLICATIONS; P-I-N PHOTODETECTORS; RESPONSIVITY; REVERSE BIAS; ROOM TEMPERATURE; SPECIFIC DETECTIVITY; THREADING DISLOCATION DENSITIES; YAG;

GALLIUM ALLOYS;

EID: 79953893358     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.007280     Document Type: Article

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