-
1
-
-
2342460263
-
Multicolor focal plane array detector: A review
-
Infrared Spaceborne Remote Sensing XI
-
M. Nurul Abedin, Tamer F. Refaat, Joseph M. Zawodny, Stephen P. Sandford, Upendra N. Singh, Sumith V. Bandara, Sarath D. Gunapala. Ishwara Bhat, and N.P. Barnes, "Multicolor Focal Plane Array Detector: A Review", Proc. SPIE Vol. 5152, Infrared Spaceborne Remote Sensing XI, pp. 279-288 (2003).
-
(2003)
Proc. SPIE
, vol.5152
, pp. 279-288
-
-
Abedin, M.N.1
Refaat, T.F.2
Zawodny, J.M.3
Sandford, S.P.4
Singh, U.N.5
Bandara, S.V.6
Gunapala, S.D.7
Bhat, I.8
Barnes, N.P.9
-
2
-
-
0141904584
-
Four-band quantum well infrared photodetector array
-
S.V. Bandara, S. D. Gunapala, J. K. Liu, S. B. Rafol, D. Z. Ting, J. M. Mumolo, R. W. Chuang, T. Q. Trinh, J. H. Liu, K. K. Choi, M. Jhabvala, J. M. Fastenau, W. K. Liu "Four-band Quantum Well Infrared Photodetector Array", Infrared Physics and Technology 44, pp. 369-375 (2003).
-
(2003)
Infrared Physics and Technology
, vol.44
, pp. 369-375
-
-
Bandara, S.V.1
Gunapala, S.D.2
Liu, J.K.3
Rafol, S.B.4
Ting, D.Z.5
Mumolo, J.M.6
Chuang, R.W.7
Trinh, T.Q.8
Liu, J.H.9
Choi, K.K.10
Jhabvala, M.11
Fastenau, J.M.12
Liu, W.K.13
-
3
-
-
0033727164
-
Status of HgCdTe-MBE technology for producing dual-band infrared detectors
-
R.D. Rajavel, P.D. Brewer, D.M. Jamba, J.E. Jensen, C. LeBeau, G.L. Olson, J.A. Roth, W.S. Williamson, J.W. Bangs, P. Goetz, J.L. Johnson, E.A. Patten, and J.A. Wilson, "Status of HgCdTe-MBE technology for producing dual-band infrared detectors", J. Crystal Growth 214/215, 1100-1105 (2000).
-
(2000)
J. Crystal Growth
, vol.214-215
, pp. 1100-1105
-
-
Rajavel, R.D.1
Brewer, P.D.2
Jamba, D.M.3
Jensen, J.E.4
LeBeau, C.5
Olson, G.L.6
Roth, J.A.7
Williamson, W.S.8
Bangs, J.W.9
Goetz, P.10
Johnson, J.L.11
Patten, E.A.12
Wilson, J.A.13
-
4
-
-
0033310646
-
Antimonide based devices for thermophotovoltaic applications
-
C. Hitchcock, R. Gutmann, J. Borrego, I. Bhat, and G. Charache, "Antimonide based devices for thermophotovoltaic applications", IEEE Transactions on Electron Devices, 46, 2154, (1999).
-
(1999)
IEEE Transactions on Electron Devices
, vol.46
, pp. 2154
-
-
Hitchcock, C.1
Gutmann, R.2
Borrego, J.3
Bhat, I.4
Charache, G.5
-
5
-
-
0032614155
-
High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices
-
C.A. Wang, H.K. Choi, S.L. Ransom, "High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices" Applied Physics Letters, Vol. 75, 1305 (1999).
-
(1999)
Applied Physics Letters
, vol.75
, pp. 1305
-
-
Wang, C.A.1
Choi, H.K.2
Ransom, S.L.3
-
6
-
-
15844416160
-
Physical properties of III-V semiconductor compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP
-
S. Adachi, "Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP", John Wiley & Sons, Inc., p. 135 (1992).
-
(1992)
John Wiley & Sons, Inc.
, pp. 135
-
-
Adachi, S.1
-
7
-
-
15844397635
-
PC1D version 5.9 for windows
-
Univ. of New South Wales
-
PC1D Version 5.9 for Windows, Centre for Photovoltaic Engineering UNSW, Univ. of New South Wales (2003).
-
(2003)
Centre for Photovoltaic Engineering UNSW
-
-
-
8
-
-
15844412279
-
Fundamentals of semiconductor theory and device physics
-
S. Wang, "Fundamentals of semiconductor theory and device physics", Prentice Hall, (1989).
-
(1989)
Prentice Hall
-
-
Wang, S.1
-
9
-
-
0027608745
-
Gallium antimony device related properties
-
A. G. Milnes and A. Y. Polyakov, "Gallium antimony device related properties", Solid State Electronics, 36(6), 803-818 (1993).
-
(1993)
Solid State Electronics
, vol.36
, Issue.6
, pp. 803-818
-
-
Milnes, A.G.1
Polyakov, A.Y.2
-
10
-
-
0032477212
-
0.2Sb layers grown by metalorganic vapor phase epitaxy
-
0.2Sb layers grown by metalorganic vapor phase epitaxy", J. Crystal Growth, 195, 385-390 (1998).
-
(1998)
J. Crystal Growth
, vol.195
, pp. 385-390
-
-
Ehsani, H.1
Bhat, I.2
Hitchcock, C.3
Gutmann, R.J.4
Charache, G.5
Freeman, M.6
|